Hexagonal Boron Nitride Based Photonic Quantum Technologies

Area of Science:

• Materials Science
• Quantum Technology
• Condensed Matter Physics

Background:

• Hexagonal boron nitride (hBN) is a 2D material with a wide band gap.
• hBN can host defects acting as single-photon emitters at room temperature.
• These properties make hBN attractive for photonic quantum technologies.

Purpose of the Study:

• To review the structure, properties, growth, and transfer of hBN.
• To discuss the creation and identification of color centers in hBN for quantum applications.
• To explore heterostructure devices for controlling hBN-based quantum emitters.

Main Methods:

• Review of existing literature on hBN.
• Analysis of defect creation and characterization techniques.
• Examination of theoretical calculations (ab initio) for defect assignment.
• Overview of device fabrication and electrical tuning methods.

Main Results:

• hBN's 2D structure and large band gap are suitable for hosting stable quantum defects.
• Color centers in hBN can function as room-temperature single-photon emitters.
• Heterostructures enable electrical control and tuning of these quantum emitters.

Conclusions:

• Significant progress has been made in defect engineering and device fabrication for hBN-based photonic quantum technologies.
• hBN shows great potential as a scalable platform for future quantum devices.
• Further research in defect control and device integration is crucial for realizing advanced quantum applications.