Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Tailoring NiO-Based Nanostructures for the Electrochemical Valorization of Ethanol: Structure-Property Insights.

Nanomaterials (Basel, Switzerland)·2026
Same author

Silver-Titania Nanocomposites for Photothermal Applications.

Gels (Basel, Switzerland)·2025
Same author

Photocatalytic oxidation of glycerol with red light employing quinacridone sensitized TiO<sub>2</sub> nanoparticles.

Journal of materials chemistry. A·2025
Same author

Conformational and environmental effects on the electronic and vibrational properties of dyes for solar cell devices.

The Journal of chemical physics·2024
Same author

Structure and vibrational properties of 1D molecular wires: from graphene to graphdiyne.

Nanoscale·2024
Same author

Micro-Raman for Local Strain Evaluation of GaN LEDs and Si Chips Assembled on Cu Substrates.

Micromachines·2024

Related Experiment Video

Updated: Jun 14, 2025

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds
09:45

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

Published on: December 2, 2013

7.6K

Raman Investigation on Silicon Nitride Chips after Soldering onto Copper Substrates.

Claudia Mezzalira1, Fosca Conti1, Danilo Pedron1,2

  • 1Department of Chemical Science, University of Padova, Via Marzolo 1, I-35131 Padova, Italy.

Micromachines
|August 29, 2024
PubMed
Summary

Strain in silicon nitride (Si3N4) chips used in microelectronics is quantified using Raman spectroscopy. Understanding this strain, caused by thermal expansion differences during soldering, is crucial for improving device reliability and performance.

Keywords:
Ramanassemblybondingcrackinginterconnectionsreliabilitysilicon nitridesinteringstress and strain

More Related Videos

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding
10:32

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding

Published on: January 9, 2014

7.4K
Analysis of Contact Interfaces for Single GaN Nanowire Devices
11:13

Analysis of Contact Interfaces for Single GaN Nanowire Devices

Published on: November 15, 2013

9.4K

Related Experiment Videos

Last Updated: Jun 14, 2025

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds
09:45

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

Published on: December 2, 2013

7.6K
Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding
10:32

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding

Published on: January 9, 2014

7.4K
Analysis of Contact Interfaces for Single GaN Nanowire Devices
11:13

Analysis of Contact Interfaces for Single GaN Nanowire Devices

Published on: November 15, 2013

9.4K

Area of Science:

  • Materials Science
  • Microelectronics Engineering
  • Solid State Physics

Background:

  • Silicon nitride (Si3N4) is vital in microelectronics for passivation and insulation.
  • Soldering processes can induce residual strains in semiconductor assemblies due to material interfaces.
  • Quantifying strain is essential for optimizing device performance, longevity, and reliability.

Purpose of the Study:

  • To analyze the thermomechanical local strain in silicon nitride chips used in optoelectronic components.
  • To investigate the strain induced by gold-tin (AuSn) soldering on copper substrates.
  • To establish a method for quantifying strain in semiconductor materials during assembly.

Main Methods:

  • Utilized Raman spectroscopy to investigate strain in beta-silicon nitride (β-Si3N4) chips.
  • Performed measurements across a temperature range of -50 to 180 °C.
  • Analyzed the shift in the E1g Raman peak to calculate local stress and determine strain.

Main Results:

  • The soldering process with AuSn on copper substrates induces significant thermomechanical strain in β-Si3N4 chips.
  • Strain is primarily attributed to mismatches in thermal expansion coefficients between the chip, solder, and substrate.
  • Raman spectroscopy effectively quantifies local strain, correlating it with assembly processes and material properties.

Conclusions:

  • Micro-Raman spectroscopy is a powerful tool for assessing strain in microelectronic assemblies.
  • Understanding and controlling strain is critical for enhancing the reliability and performance of optoelectronic devices.
  • The findings enable informed decisions for optimizing device design and manufacturing processes to mitigate strain effects.