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Degradation Induced by Total Ionizing Dose and Hot Carrier Injection in SOI FinFET Devices

Hao Yu1, Wei Zhou1, Hongxia Liu1

  • 1Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education Ministry, School of Microelectronics, Xidian University, Xi'an 710071, China.

Micromachines
|August 29, 2024
PubMed

Keywords:
HCISOI FinFETTCAD simulationTIDcoupling effecttemperature

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