Degradation Induced by Total Ionizing Dose and Hot Carrier Injection in SOI FinFET Devices

Area of Science:

• Semiconductor device physics
• Aerospace electronics reliability

Background:

• Electronic devices in aerospace face harsh operating conditions.
• Ensuring the reliability of Silicon-on-Insulator (SOI) FinFETs is critical for aerospace applications.

Purpose of the Study:

• To investigate the total ionizing dose (TID) and hot carrier injection (HCI) reliability of SOI FinFETs.
• To simulate the individual and coupled effects of TID and HCI on device performance.

Main Methods:

• Simulations were used to assess the impact of TID on SOI FinFETs.
• Simulations were conducted to evaluate the effects of HCI on SOI FinFETs.
• Coupled effects of TID and HCI were simulated.

Main Results:

• TID decreases threshold voltage, increases off-state current and subthreshold swing, and reduces saturation drain current, with exacerbated effects at high temperatures.
• HCI increases threshold voltage and decreases saturation drain current, with more severe effects at high temperatures.
• Simulations of coupled TID and HCI effects showed mutual cancellation, with varying degradation of electrical parameters depending on the coupling mode.

Conclusions:

• TID and HCI have distinct and sometimes opposing effects on SOI FinFET electrical characteristics.
• The combined impact of TID and HCI is complex and depends on the specific operating conditions and coupling modes.
• Understanding these reliability aspects is crucial for the deployment of SOI FinFETs in demanding aerospace environments.