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Correction: High-performance one-dimensional halide perovskite crossbar memristors and synapses for neuromorphic
Sujaya Kumar Vishwanath1, Benny Febriansyah2, Si En Ng1
1School of Materials Science & Engineering, Nanyang Technological University, 639798, Singapore. sujayav@iisc.ac.in.
Materials Horizons
|August 29, 2024
Summary
This correction addresses errors in a study on halide perovskite memristors for neuromorphic computing. It ensures accurate data for high-performance devices in artificial intelligence applications.
Area of Science:
- Materials Science
- Electronics
- Neuroscience
Context:
- Neuromorphic computing aims to mimic the human brain's structure and function.
- Memristors are crucial components for building brain-inspired computing systems.
- Halide perovskites offer promising optoelectronic properties for next-generation electronics.
Purpose:
- To correct inaccuracies in a published article concerning one-dimensional halide perovskite crossbar memristors and synapses.
- To ensure the reliability and reproducibility of research in neuromorphic computing.
Summary:
- The correction pertains to the article "High-performance one-dimensional halide perovskite crossbar memristors and synapses for neuromorphic computing."
- Specific errors requiring correction are detailed in the original publication.
- The corrected information is vital for understanding the performance of these perovskite-based devices.
Impact:
- Ensures the scientific community has access to accurate data for advancing neuromorphic computing.
- Facilitates further research and development of perovskite-based memristors and synapses.
- Upholds the integrity of published scientific literature in materials science and computing.
