Negative capacitance in Au/CuInGaSe2/SiO2/n-Si/Al Schottky barrier diode devices

A Ashery1, A E H Gaballah2, Mohamed A Basyooni-M Kabatas3,4,5

  • 1Solid State Physics Department, Physics Research Institute, National Research Centre, 33 El-Bohouth St, Dokki, Giza 12622, Egypt.

Summary

This study introduces copper indium gallium selenide (CuInGaSe2) into Schottky barrier diodes for supercapacitors. The alloy exhibits unique frequency-dependent capacitance, showing potential for advanced sustainable energy storage.

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