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Published on: October 23, 2018
Negative capacitance in Au/CuInGaSe2/SiO2/n-Si/Al Schottky barrier diode devices
A Ashery1, A E H Gaballah2, Mohamed A Basyooni-M Kabatas3,4,5
1Solid State Physics Department, Physics Research Institute, National Research Centre, 33 El-Bohouth St, Dokki, Giza 12622, Egypt.
This study introduces copper indium gallium selenide (CuInGaSe2) into Schottky barrier diodes for supercapacitors. The alloy exhibits unique frequency-dependent capacitance, showing potential for advanced sustainable energy storage.
Area of Science:
- Materials Science
- Electrical Engineering
- Sustainable Energy
Background:
- Copper indium gallium selenide (CuInGaSe2) is traditionally used in solar cells.
- Schottky barrier diodes are crucial for electronic devices.
- Supercapacitors are key components in sustainable energy storage.
Purpose of the Study:
- To explore the novel application of CuInGaSe2 in Schottky barrier diodes.
- To investigate the electrical and dielectric properties of CuInGaSe2 in this new context.
- To assess the potential of CuInGaSe2-based diodes for supercapacitor technology.
Main Methods:
- Synthesized CuInGaSe2 via liquid phase epitaxy on silicon substrates.
- Fabricated Schottky barrier diode devices incorporating CuInGaSe2.
- Analyzed structural, electrical, and dielectric properties, focusing on capacitance behavior.
Main Results:
- CuInGaSe2 exhibits unique capacitance behavior transitioning from positive to negative with frequency.
- Negative capacitance values were observed at 12,900 Hz and 300 K.
- Both positive and negative capacitance values were observed across frequencies around 1216 Hz.
Conclusions:
- CuInGaSe2 demonstrates significant promise for enhancing supercapacitor efficiency and sustainability.
- The study highlights the broader applicability of CuInGaSe2 in sustainable energy technologies.
- Findings pave the way for advanced supercapacitor production using novel materials.
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