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Field-free Spin-Orbit Torque Perpendicular Magnetization Switching Induced by Metallic Multilayers.
Jiaqiang Liu1, Xi Zha1, Qi Lu1
1State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Engineering Research Center of Spin Quantum Sensor Chips, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China.
Researchers achieved field-free perpendicular magnetization switching using [Pt/Au] multilayers. This spin-orbit torque (SOT) advancement is crucial for next-generation spintronic devices and data storage.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Spintronics
Background:
- All-electrical manipulation of perpendicular magnetization switching is key for advanced information storage and spintronic devices.
- Current-induced spin-orbit torque (SOT) is a promising method, but often requires external magnetic fields, hindering practical applications.
Purpose of the Study:
- To investigate spin-orbit torque (SOT) in [Pt/Au] multilayers with a compositional gradient.
- To achieve current-induced, field-free perpendicular magnetization switching in spintronic heterostructures.
Main Methods:
- Fabrication and characterization of [Pt/Au] multilayer films with compositional gradients.
- Measurement of SOT efficiency and anomalous Hall resistance loops.
- Control experiments to identify the source of spin current polarization.
Main Results:
- The [Pt/Au] multilayer demonstrated significantly enhanced SOT efficiency compared to pure Pt.
- Current-induced, field-free perpendicular magnetization switching was successfully realized in Co/[Pt/Au] heterostructures.
- Anomalous Hall measurements confirmed the generation of a z-direction polarized spin current, primarily attributed to the Pt/Au interface.
Conclusions:
- The Pt/Au interface plays a critical role in generating the z-direction polarized spin current necessary for field-free switching.
- Field-free switching is likely driven by a synergistic interface effect and Dzyaloshinskii-Moriya interaction.
- This research advances SOT devices toward practical applications and offers new insights into magnetization switching mechanisms.
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