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Spin Hall-induced bilinear magnetoelectric resistance
Dong-Jun Kim1, Kyoung-Whan Kim2,3, Kyusup Lee1,4
1Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore.
Nature Materials
|September 12, 2024
Summary
Bilinear magnetoelectric resistance (BMER) is a general phenomenon in 3D systems, not requiring spin textures. The bulk spin Hall effect enables BMER, crucial for antiferromagnetic spintronics and advanced devices.
Area of Science:
- Condensed matter physics
- Spintronics
- Transport phenomena
Background:
- Magnetoresistance is key for magnetic data storage, computing, and sensors.
- Nonlinear magnetoresistance, like bilinear magnetoelectric resistance (BMER), is gaining attention.
- BMER is proportional to both electric and magnetic fields.
Purpose of the Study:
- To demonstrate BMER as a general phenomenon in 3D systems.
- To elucidate the role of the spin Hall effect in BMER.
- To explore BMER's significance in antiferromagnetic spintronics.
Main Methods:
- Theoretical analysis of transport phenomena in 3D systems.
- Investigating the influence of spin accumulation at interfaces.
- Connecting BMER to the bulk spin Hall effect.
Main Results:
- BMER occurs in 3D systems without momentum-space spin textures.
- The spin Hall effect drives BMER when interface spin accumulations differ.
- BMER's sign correlates with the heavy metal's spin Hall effect sign.
Conclusions:
- BMER is a general nonlinear transport characteristic in 3D systems.
- The bulk spin Hall effect is the origin of BMER.
- BMER is vital for antiferromagnetic spintronics and future device applications.
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