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Related Experiment Video

Updated: Jun 13, 2025

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Intrinsic Ferroelectric Switching in Two-Dimensional α-In₂Se₃.

Liyi Bai^1,2, Changming Ke^1,2, Zhongshen Luo³

¹Department of Physics, School of Science and Research Center for Industries of the Future, Westlake University, 600 Dunyu Road, Hangzhou 310030, Zhejiang Province, China.

|September 16, 2024

Summary

This summary is machine-generated.

This study clarifies that two-dimensional (2D) ferroelectric semiconductor α-In₂Se₃ lacks in-plane polarization. Domain walls move via avalanche dynamics, offering new insights for 2D nanoelectronics.

Keywords:

2D ferroelectrics deep potential molecular dynamics domain wall dynamics in-plane polarization α-In2Se3

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Measuring Magnetically-Tuned Ferroelectric Polarization in Liquid Crystals

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Published on: August 15, 2018

Area of Science:

Materials Science
Condensed Matter Physics
Nanotechnology

Background:

Two-dimensional (2D) ferroelectric semiconductors are key for advanced nanoelectronics.
α-Indium Selenide (α-In₂Se₃) is a 2D ferroelectric with vertical polarization, but its in-plane properties are debated.

Purpose of the Study:

To resolve conflicting experimental and theoretical findings on α-In₂Se₃'s ferroelectricity.
To elucidate the domain switching mechanisms in monolayer α-In₂Se₃.

Main Methods:

Combined experimental characterizations using piezoresponse force microscopy and symmetry analysis.
Deep-learning-assisted large-scale molecular dynamics simulations.

Main Results:

Conclusively dismissed claims of in-plane ferroelectricity in single-domain α-In₂Se₃.
Revealed novel atomistic mechanisms for vertical polarization switching.
Demonstrated that 1D domain walls move via avalanche dynamics under both out-of-plane and in-plane fields.
Characterized domain wall velocity using a universal creep equation with a distinct dynamical exponent of 2.

Conclusions:

Rectified the misunderstanding of in-plane ferroelectricity in α-In₂Se₃.
Quantitative characterization of domain wall dynamics provides crucial data for 2D ferroelectric applications and fundamental understanding.