Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Design and realization of a sputter deposition system for the <i>in situ</i> and <i>in operando</i> use in polarized neutron reflectometry experiments: Novel capabilities.

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment·2026
Same author

Characterization of Stable NiO <i><sub>x</sub></i> /SrTaO <i><sub>x</sub></i> N <i><sub>y</sub></i> Bilayers Boosting the Oxygen Evolution Reaction for Solar Water Splitting.

Small science·2026
Same author

Optimization of magnetic reference layer for neutron reflectometry.

Journal of applied crystallography·2025
Same author

The meaning of Li diffusion in cathode materials for the cycling of Li-ion batteries: A case study on LiNi0.33Mn0.33Co0.33O2 thin films.

The Journal of chemical physics·2025
Same author

Electrochemical-mechanical model of the space charge zone at the interface.

Physical chemistry chemical physics : PCCP·2025
Same author

BIFROST-An indirect geometry cold neutron spectrometer at the European Spallation Source.

The Review of scientific instruments·2025

Related Experiment Video

Updated: Jun 13, 2025

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

2.2K

Self-Diffusion of Ge in Amorphous Ge Si1- Films Studied In Situ by Neutron Reflectometry.

Erwin Hüger1,2, Jochen Stahn3, Harald Schmidt1,2

  • 1Institute of Metallurgy, Solid State Kinetics Group, Clausthal University of Technology, Clausthal-Zellerfeld 38678, Germany.

ACS Materials Au
|September 16, 2024
PubMed
Summary

Germanium (Ge) self-diffusion in amorphous Germanium Silicon (GeSi1-) alloys increases with Ge content. This study reveals a decreasing activation enthalpy, crucial for understanding diffusion in miniaturized electronic and optical devices.

More Related Videos

Using Neutron Spin Echo Resolved Grazing Incidence Scattering to Investigate Organic Solar Cell Materials
06:05

Using Neutron Spin Echo Resolved Grazing Incidence Scattering to Investigate Organic Solar Cell Materials

Published on: January 15, 2014

6.8K
Epitaxial Nanostructured &#945;-Quartz Films on Silicon: From the Material to New Devices
11:34

Epitaxial Nanostructured α-Quartz Films on Silicon: From the Material to New Devices

Published on: October 6, 2020

5.4K

Related Experiment Videos

Last Updated: Jun 13, 2025

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

2.2K
Using Neutron Spin Echo Resolved Grazing Incidence Scattering to Investigate Organic Solar Cell Materials
06:05

Using Neutron Spin Echo Resolved Grazing Incidence Scattering to Investigate Organic Solar Cell Materials

Published on: January 15, 2014

6.8K
Epitaxial Nanostructured &#945;-Quartz Films on Silicon: From the Material to New Devices
11:34

Epitaxial Nanostructured α-Quartz Films on Silicon: From the Material to New Devices

Published on: October 6, 2020

5.4K

Area of Science:

  • Materials Science
  • Solid-State Physics
  • Nanotechnology

Background:

  • Germanium-Silicon (GeSi1-) alloys are vital for advanced electronics and optics, particularly in miniaturized devices exhibiting quantum effects.
  • Atomic diffusion and point defects significantly influence the properties of metastable and nanoscale GeSi1- systems.

Purpose of the Study:

  • To investigate the in situ Ge self-diffusion behavior in amorphous GeSi1- alloys.
  • To determine the influence of Ge content (x) on Ge self-diffusivity and activation enthalpy.

Main Methods:

  • Utilized neutron reflectometry for in situ measurement of Ge self-diffusion.
  • Studied amorphous GeSi1- alloys with varying Ge content (x = 0.13, 0.43, 0.8, and 1.0).

Main Results:

  • Ge self-diffusivity in amorphous GeSi1- alloys follows the Arrhenius law across the studied temperature ranges.
  • Ge self-diffusivity increases with higher Ge content (x) at a constant temperature.
  • Activation enthalpy for Ge self-diffusion decreases with increasing Ge content, from 4.4 eV in pure silicon to approximately 2 eV in Ge0.8Si0.2 and Ge.

Conclusions:

  • The observed decrease in activation enthalpy for amorphous GeSi1- alloys mirrors trends seen in their crystalline counterparts.
  • Findings provide critical insights into atomic diffusion mechanisms in GeSi1- alloys, essential for designing next-generation electronic and optical devices.