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Palladium-Doped Cs2AgBiBr6 with 1300 nm Near-Infrared Photoresponse
Hongwei Lei1,2, Utkarsh Singh2, Fuxiang Ji2
1College of Engineering, Huazhong Agricultural University, Wuhan, 430070, China.
Small (Weinheim an Der Bergstrasse, Germany)
|September 20, 2024
Summary
Palladium doping extends the light absorption of lead-free halide double perovskites (HDPs) to 1400 nm. This creates a sub-bandgap state, enabling HDPs for near-infrared optoelectronics.
Area of Science:
- Materials Science
- Solid-State Physics
- Optoelectronics
Background:
- Lead-free halide double perovskites (HDPs) like Cs2AgBiBr6 offer promising optoelectronic properties.
- A key limitation of Cs2AgBiBr6 is its narrow light absorption range, restricting its applications.
Purpose of the Study:
- To enhance the absorption range of Cs2AgBiBr6 using palladium (Pd) doping.
- To investigate the mechanism of absorption extension and its impact on photoelectric applications.
Main Methods:
- Palladium (Pd) doping into Cs2AgBiBr6 host lattice.
- Spectroscopical measurements to analyze material properties.
- Theoretical calculations to understand doping effects and electronic structure.
Main Results:
- Pd doping significantly extends the absorption spectrum of Cs2AgBiBr6 to approximately 1400 nm.
- Pd2+ ions substitute Ag atoms, introducing a sub-bandgap state within the host bandgap.
- The sub-bandgap state enables a photoresponse up to 1300 nm (NIR-II region), a record for HDPs.
Conclusions:
- Palladium is an effective dopant for broadening the absorption of large bandgap HDPs.
- Utilizing sub-bandgap states is a viable strategy for tailoring HDPs for near-infrared optoelectronics.
- This research opens new avenues for developing HDPs in NIR optoelectronic devices.
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