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Single-Component High-Resolution Dual-Tone EUV Photoresists Based on Precision Self-Immolative Polymers
1Department of Pharmacy, The First Affiliated Hospital of University of Science and Technology of China, and Laboratory of Precision and Intelligent Chemistry, Department of Polymer Science and Engineering, University of Science and Technology of China, 96 Jinzhai Road, 230026, Hefei, Anhui Province, China.
High-performance photoresists using discrete self-immolative polymers (SIPs) achieve sub-20nm resolution for electron beam and extreme ultraviolet lithography. These materials offer improved resolution, reduced line edge roughness, and excellent etch resistance, addressing key challenges in semiconductor manufacturing.
Area of Science:
- Materials Science
- Nanotechnology
- Chemical Engineering
Background:
- Electron beam (EB) and extreme ultraviolet (EUV) lithography are crucial for sub-10nm resolutions in semiconductor fabrication.
- Developing EUV photoresists that balance resolution, line edge roughness (LER), and sensitivity (RLS) is a significant challenge.
- Self-immolative polymers (SIPs) offer a promising route for signal amplification through cascade degradation.
Purpose of the Study:
- To introduce high-performance, single-component photoresists based on discrete self-immolative polymers (SIPs).
- To evaluate the performance of these SIPs as dual-tone photoresists under both EB and EUV lithography.
- To demonstrate improvements in resolution, LER, and etch resistance compared to disperse SIPs.
Main Methods:
- Synthesis and characterization of single-component self-immolative polymers (SIPs).
- Fabrication of discrete and disperse SIP-based photoresists.
- Lithographic evaluation using electron beam and extreme ultraviolet exposure.
- Analysis of resolution, line edge roughness (LER), and etch resistance.
Main Results:
- Discrete SIPs demonstrated superior performance over disperse counterparts in both EB and EUV lithography.
- A discrete SIP (DP of 12) achieved approximately 18nm resolution and 1.8nm LER, outperforming disperse SIPs (21nm resolution, 2.5nm LER).
- The SIP-based photoresists exhibited excellent etch resistance due to their aromatic structures.
Conclusions:
- Single-component discrete SIPs offer a viable solution for advanced lithography, addressing the resolution-line edge roughness-sensitivity (RLS) trade-off.
- These materials show significant promise for next-generation nanostructure and semiconductor device fabrication.
- The dual-tone capability and inherent signal amplification make discrete SIPs highly attractive for EUV lithography applications.
