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Collinear Spin Current Induced by Artificial Modulation of Interfacial Symmetry
Zhuoyi Li1,2,3, Zhe Zhang1,2,3, Mengjie Wei4
1National Key Laboratory of Spintronics, Nanjing University, Suzhou, 215163, China.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)
|September 24, 2024
Summary
Researchers achieved 100% efficient, field-free spin-orbit torque (SOT) switching in magnetic multilayers. This breakthrough uses artificial modulation of interfacial symmetry to enhance SOT efficiency for spintronic devices.
Area of Science:
- Spintronics
- Materials Science
- Condensed Matter Physics
Background:
- Current-induced spin-orbit torque (SOT) is crucial for spintronic devices.
- SOT efficiency is limited for perpendicular magnetic anisotropy (PMA) materials, hindering high-density storage applications.
Purpose of the Study:
- To demonstrate a highly efficient method for field-free SOT switching in PMA materials.
- To overcome limitations in current SOT manipulation by artificially modulating interfacial symmetry.
Main Methods:
- Fabrication of CoFeB multilayers with perpendicular magnetization on stepped Al2O3 substrates.
- Generation of collinear spin currents via artificial modulation of interfacial symmetry.
- Microscopic theoretical analysis to confirm the underlying physical mechanisms.
Main Results:
- Achieved 100% current-induced field-free SOT switching.
- Demonstrated that out-of-plane anti-damping SOT, driven by the planar spin Hall effect (PSHE), is the primary switching mechanism.
- Reduced interface symmetry due to substrate steps was identified as the cause of PSHE.
Conclusions:
- Artificial modulation of interfacial symmetry enables efficient field-free SOT switching.
- The planar spin Hall effect (PSHE) plays a significant role in achieving high SOT efficiency.
- This approach offers a promising pathway for developing energy-efficient spintronic devices by overcoming material symmetry constraints.
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