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Ultra-shallow p-type doping of silicon by performing atomic layer deposition of Al2O3 thin films onto SiO2/Si
Salma Khaldi1, Prajith Karadan1, Krushnamurty Killi1
1Institute of Chemistry and the Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Givat Ram Jerusalem 91904, Israel. roie.yerushalmi@mail.huji.ac.il.
Abstract:
We report an ultra-shallow p-type doping of silicon resulting from the rapid thermal annealing of thin Al2O3 films deposited on intrinsic silicon with a native SiO2 layer, using a common atomic layer deposition process. Characterization revealed a two-stage decrease in sheet resistance, providing insights into the doping mechanism.

