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Updated: Jun 12, 2025

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
Published on: June 23, 2018
High discrimination ratio, broadband circularly polarized light photodetector using dielectric achiral nanostructures
Guanyu Zhang1, Xiaying Lyu1, Yulu Qin1
1State Key Laboratory for Mesoscopic Physics, Collaborative Innovation Center of Quantum Matter, Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing, China.
Abstract:
The on-chip measurement of polarization states plays an increasingly crucial role in modern sensing and imaging applications. While high-performance monolithic linearly polarized photodetectors have been extensively studied, integrated circularly polarized light (CPL) photodetectors are still hindered by inadequate discrimination capability. This study presents a broadband CPL photodetector utilizing achiral all-dielectric nanostructures, achieving an impressive discrimination ratio of ~107 at a wavelength of 405 nm. Our device shows outstanding CPL discrimination capability across the visible band without requiring intensity calibration. It functions based on the CPL-dependent near-field modes within achiral structures: under left or right CPL illumination, distinct near-field modes are excited, resulting in asymmetric irradiation of the two electrodes and generating a photovoltage with directions determined by the chirality of the incident light field. The proposed design strategy facilitates ultra-compact CPL detection across diverse materials, structures, and spectral ranges, presenting a novel avenue for achieving high-performance monolithic CPL detection.

