Single Crystalline GeSe Van Der Waals Ribbons With Uniform Layer Stacking, High Carrier Mobility, and Adjustable Edge...

Area of Science:

• Materials Science
• Solid-State Physics
• Nanotechnology

Background:

• Group IV monochalcogenides like germanium selenide (GeSe) show promise for electronic and optoelectronic devices.
• High-quality single crystalline GeSe is crucial for improved device performance, surpassing polycrystalline films.
• Synthesizing large, thin single crystalline flakes remains a significant challenge.

Purpose of the Study:

• To develop a scalable method for producing high-quality single crystalline GeSe.
• To investigate the structural and electronic properties of the synthesized GeSe.
• To explore the potential of modified GeSe for catalytic applications.

Main Methods:

• Utilizing vapor-liquid-solid (VLS) growth combined with lateral vapor-solid incorporation.
• Characterizing the synthesized GeSe ribbons using electron microscopy.
• Conducting electrical transport measurements, including Hall mobility analysis.
• Growing GeSe ribbons from mixed GeSe and SnSe vapors.

Main Results:

• Successfully produced high-quality single crystalline GeSe ribbons with controllable thickness and micrometer-scale dimensions.
• Observed perfect van der Waals (AB) stacking order and absence of extended defects.
• Demonstrated anisotropic transport with a high Hall mobility of 85 cm² V⁻¹ s⁻¹, comparable to state-of-the-art single crystals.
• Synthesized GeSe ribbons with jagged edges from mixed vapors, indicating potential for edge-site applications.

Conclusions:

• VLS growth offers a viable route to scalable synthesis of high-quality, defect-free single crystalline GeSe ribbons.
• The synthesized GeSe ribbons exhibit excellent electronic properties suitable for advanced devices.
• Modified GeSe ribbons with jagged edges present opportunities for catalysis and photocatalysis.