Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Biasing of FET01:22

Biasing of FET

221
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
221
Generator Voltage Control01:21

Generator Voltage Control

132
Generator voltage control is crucial for maintaining the stable operation of synchronous generators and wind turbines. In older models, a DC generator driven by the rotor delivers DC power to the rotor's field winding, and the power is transferred through slip rings and brushes. In the latest models, static or brushless exciters are used. Static exciters rectify AC power from the generator terminals and then transfer the DC power directly to the rotor. Brushless exciters, on the other hand,...
132
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

220
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
220
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

300
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
300
Switching of BJT01:22

Switching of BJT

365
Switching behavior in Bipolar Junction Transistors (BJTs) is a fundamental aspect utilized in various electronic circuits, particularly for digital logic applications like switches and amplifiers. In a typical switching circuit, a BJT alternates between cut-off and saturation modes, corresponding to the "off" and "on" states, respectively, thus behaving like an ideal switch.
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are...
365
Biasing of P-N Junction01:16

Biasing of P-N Junction

443
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
443

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Dynamics and compositional profiles of human milk oligosaccharides in mothers with gestational diabetes mellitus across lactation.

Frontiers in nutrition·2026
Same author

Enhancement of Male Sterility Stability in <i>Indica</i> Rice by Dual Thermo-Sensitive Genic Male Sterile Genes.

Plants (Basel, Switzerland)·2026
Same author

A case of normolipidemic lipoprotein glomerulopathy due to the APOE Kyoto variant.

Journal of clinical lipidology·2026
Same author

Generalized Turnstile Rotation: Formulation, Visualization, Workflow Implementation, and Application for Modeling Polytopal Rearrangements.

Journal of computational chemistry·2026
Same author

Light-Driven Ferroic Switching Enables Reversible Control of Hydrogen Adsorption Thermodynamics.

Nano letters·2026
Same author

The ground and low-lying electronic states of OsO.

The Journal of chemical physics·2026

Related Experiment Video

Updated: Jun 11, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.0K

Band-Edge Mixture Engineered Giant and Switchable Shift Current Generation.

Yue Gao1, Mengtong Yang1, Wenli Zou1

  • 1School of Physics, Northwest University, Xi'an 710127, China.

Nano Letters
|September 27, 2024
PubMed
Summary
This summary is machine-generated.

Researchers enhanced the bulk photovoltaic effect (BPVE) in 2D materials by tuning band mixing. This study demonstrates a giant, switchable shift current in C3B/C3N bilayers, paving the way for novel nonlinear optical applications.

Keywords:
band-edge mixturebulk photovoltaic effectfirst-principles calculationsinterlayer slidingtight-binding model

More Related Videos

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

9.5K
Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators
11:44

Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators

Published on: August 15, 2014

10.3K

Related Experiment Videos

Last Updated: Jun 11, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.0K
Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

9.5K
Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators
11:44

Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators

Published on: August 15, 2014

10.3K

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Optoelectronics

Background:

  • Two-dimensional (2D) materials offer significant potential for bulk photovoltaic effect (BPVE) applications.
  • Enhancing and controlling BPVE is crucial for advancing optoelectronic devices.

Purpose of the Study:

  • To investigate mechanisms for enhancing shift current generation in 2D materials.
  • To demonstrate a controllable and switchable BPVE in a realistic material system.

Main Methods:

  • Utilized a simplified Hamiltonian model to explore band mixing effects on optical absorption and shift current.
  • Employed density functional theory (DFT) calculations and a tight-binding model for the C3B/C3N bilayer.
  • Analyzed interfacial interactions and electron transfer between layers.

Main Results:

  • Demonstrated that substantial band mixing significantly enhances shift current generation.
  • Achieved a giant in-plane shift current exceeding ~1500 μA/V² in the C3B/C3N bilayer due to interfacial electron transfer.
  • Showed that interlayer sliding can reverse the direction of the in-plane shift current.

Conclusions:

  • A feasible approach for achieving giant and switchable nonlinear optical processes in 2D materials has been proposed.
  • The findings highlight the potential of engineered 2D heterostructures for advanced photovoltaic and nonlinear optical applications.