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Updated: Jun 11, 2025

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
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Gas Sensing Properties of Indium-Oxide-Based Field-Effect Transistor: A Review

Chengyao Liang1,2, Zhongyu Cao3, Jiongyue Hao2

  • 1State Key Laboratory of Coal Mine Disaster Dynamic and Control, Chongqing University, Chongqing 400044, China.

Sensors (Basel, Switzerland)
|September 28, 2024
PubMed

Keywords:
In2O3MOSFETTFTfield–effect transistorgas sensor

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