Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Field Effect Transistor01:29

Field Effect Transistor

315
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
315
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

300
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
300
Schottky Barrier Diode01:27

Schottky Barrier Diode

305
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
305
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

307
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
307
MOSFET01:16

MOSFET

429
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
429

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Exercise intention, positive body image, and mental health and well-being among elite young adult athletes in china: a network analysis incorporating gender differences.

Scientific reports·2026
Same author

Factors associated with reproductive concerns among adolescent and young adult cancer survivors: A cross-sectional study.

European journal of oncology nursing : the official journal of European Oncology Nursing Society·2026
Same author

High responsivity IR sensing based on reflectometric RF MEMS.

Nature communications·2026
Same author

Ferroelectric Dynamic-Field-Driven Nucleation and Growth Model for Predictive Materials-To-Circuit Co-Design.

Advanced materials (Deerfield Beach, Fla.)·2026
Same author

Research trends and emerging themes of magnetic resonance imaging in endometrial cancer: a bibliometric analysis.

Abdominal radiology (New York)·2026
Same author

Reducing Plasma-Induced Damage in 2D Transition Metal Dichalcogenide Heterostructures through Optimized Plasma-Enhanced Atomic Layer Deposition.

ACS applied materials & interfaces·2026

Related Experiment Video

Updated: Jun 11, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

7.6K

Ultra-High-k Ferroelectric BaTiO3 Perovskite in the Gate Stack for Two-Dimensional WSe2 p-Type High-Performance

Punyashloka Debashis1, Hojoon Ryu1, Rachel Steinhardt1

  • 1Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States.

Nano Letters
|October 1, 2024
PubMed
Summary

Researchers developed a p-type 2D tungsten diselenide (WSe2) transistor using a barium titanate (BaTiO3) ferroelectric gate oxide. This breakthrough enables high ON currents and shows promise for low-voltage ferroelectric logic and scaled CMOS applications.

Keywords:
2D materialBaTiO3WSe2ferroelectric field effect transistorgate insulatorperovskite oxide

More Related Videos

Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain
08:00

Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain

Published on: March 27, 2018

11.0K
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.4K

Related Experiment Videos

Last Updated: Jun 11, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

7.6K
Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain
08:00

Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain

Published on: March 27, 2018

11.0K
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.4K

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Two-dimensional (2D) materials offer unique electronic properties for next-generation devices.
  • Ferroelectric materials provide tunable gate control but integration challenges persist.
  • Perovskite oxides like BaTiO3 exhibit strong ferroelectricity and high dielectric constants.

Purpose of the Study:

  • To demonstrate a p-type 2D WSe2 transistor with a ferroelectric BaTiO3 gate oxide.
  • To investigate the performance of the hybrid WSe2/BaTiO3 heterostructure.
  • To assess the potential for scaled CMOS and ferroelectric logic applications.

Main Methods:

  • Fabrication of a 30 nm thick BaTiO3 gate stack on WSe2.
  • Characterization of ferroelectric hysteresis and dielectric properties of BaTiO3.
  • Electrical measurements of the WSe2 transistor performance, including ON current.

Main Results:

  • Achieved a robust ferroelectric hysteresis with remanent polarization of 20 μC/cm2.
  • Obtained a capacitance equivalent thickness of 0.5 nm due to BaTiO3's high dielectric constant (323).
  • Demonstrated high ON currents, among the best reported for perovskite-gated 2D transistors.

Conclusions:

  • The integration of crystalline BaTiO3 with 2D WSe2 is a significant advancement.
  • The demonstrated device is compatible with silicon platforms and amenable to scalable fabrication.
  • This work paves the way for low-voltage ferroelectric logic and advanced CMOS devices.