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A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
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Hf0.4Zr0.6O2 Thickness-Dependent Transfer Characteristics of InZn1-O Channel Ferroelectric FETs

Jiae Jeong1, Hyoungjin Park1, Jihyun Kim2

  • 1School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, South Korea.

The Journal of Physical Chemistry Letters
|October 3, 2024
PubMed

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