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One-Selector-One-Resistor Integrated Memory Cells Based on Two-Dimensional Heterojunction Memory Selectors
Minliang Shen1, Sheng Shen1, Yueyang Jia1
1University of Michigan─Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai 200240, China.
ACS Nano
|October 4, 2024
Summary
Two-dimensional material heterostructures act as selectors in resistive random-access memory (RRAM) cells, significantly reducing sneak path currents. This innovation enhances RRAM performance and enables more efficient 3D memory arrays.
Area of Science:
- Materials Science
- Solid State Physics
- Electrical Engineering
Background:
- Resistive random-access memory (RRAM) arrays suffer from sneak path leakage currents, hindering scalability.
- Two-dimensional (2D) materials offer tunable properties for fabricating advanced electronic components.
- Van der Waals heterostructures provide a versatile platform for designing novel device functionalities.
Purpose of the Study:
- To demonstrate 2D-material-based heterostructure selectors for RRAM applications.
- To integrate these selectors into one-selector-one-resistor (1S1R) RRAM cells.
- To evaluate the performance enhancement and potential for 3D memory integration.
Main Methods:
- Fabrication of multilayer graphene (MG)/tungsten disulfide (WS2)/platinum (Pt) heterostructure selectors.
- Experimental characterization of current-voltage (I-V) relationships and Schottky barrier properties.
- Integration of 2D selectors with hafnium oxide (HfOx)-based RRAMs to form 1S1R cells.
- Circuit-level simulations of 1S1R cells in planar and 3D memory arrays.
Main Results:
- The MG/WS2/Pt selector exhibited highly nonlinear and asymmetric I-V characteristics due to distinct Schottky barriers.
- Integrated 1S1R cells demonstrated a reduction in sneak path leakage current by over 100 times.
- Simulations showed significant power consumption reduction (up to 86%) and improved read/write margins (up to 31%) in large 3D arrays.
- The selectors successfully provided set compliance current for RRAM operation.
Conclusions:
- 2D material heterostructures are effective selectors for suppressing sneak path currents in RRAM.
- The demonstrated 1S1R cells offer a promising pathway for high-density 3D RRAM.
- This platform has potential for advanced applications like in-memory computing.
