Incorporation of Graphene Oxide Quantum Dots in Gradient Layers of Polyethersulphone Nanofiltration Membranes for...

Graphene oxide quantum dots (GOQDs) have been widely used to prepare nanofiltration membranes due to the merits of excellent dispersity, ultrasmall size, and unique properties related to graphene. In this study, we first prepared the polyethersulphone-based nanofiltration (PES-NF) membrane via an interfacial polymerization process using a piperazine and m-phenylenediamine mixed solution as the aqueous phase. Then GOQDs were incorporated into the top-down gradient structured layers (i.e., ultrathin layer, interlayer, and substrate membrane layer) of the nanofiltration membrane, and subsequently the effect of GOQD addition on the nitrate rejection was evaluated. Compared with the pristine PES-NF membrane without the incorporation of GOQDs, the fabricated NF membrane (GOQD/PES-NF-2) incorporating GOQDs at both the ultrathin layer and interlayer exhibits more remarkable performances (an acceptable permeation flux of 52.2 L m^-1 h^-1 and excellent nitrate rejection of 96.3% at 0.6 MPa), the permeation flux of this membrane increases by nearly 2.4 times, and its nitrate rejection also shows a slight enhancement (∼7.6%) compared with those of PES-NF. Remarkably, at the operating pressure much lower than that required by reverse osmosis membranes, the GOQD/PES-NF-2 membrane possesses an equivalent monovalent ion rejection to reverse osmosis membranes but a higher permeation flux. Furthermore, the result of a 7 day continuous stability test validates the excellent durability of the GOQD/PES-NF-2 membrane, and its antifouling and chlorine resistance performances also outperform those of the PES-NF membrane.