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Updated: Jun 11, 2025

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
Published on: March 24, 2019
Study on the effects of strain and electrostatic doping on the magnetic anisotropy of GaN/VTe2van der waals
Junjun Xue1, Wei Chen1, Shanwen Hu2,3
1College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China.
Abstract:
Using a first-principles approach, this study delves into the effects of strain and electrostatic doping on the electronic and magnetic properties of the GaN/VTe2van der Waals (vdW) heterostructure. The results reveal that when the GaN/VTe2vdW heterostructure is doped with 0.1h/0.2hof electrostatic charge, its magnetization direction undergoes a remarkable reversal, shifting from out-of-plane orientation to in-plane direction. Therefore, we conduct a thorough investigation into the influence of electron orbitals on magnetic anisotropy energy. In addition, as the strain changes from -1% to 1%, the 100% spin polarization region of the GaN/VTe2vdW heterostructure becomes smaller. It is worth noting that at a doping concentration of 0.1h, the GaN/VTe2vdW heterostructure has a Curie temperature of 30 K above room temperature. This comprehensive study provides valuable insights and provides a reference for analyzing the electronic and magnetic properties of low-dimensional systems.
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