Low-threshold 571 nm plasmonic nanolaser from InGaN/GaN nanopillars

Long-wavelength GaN-based plasmonic nanolasers face critical challenges in miniaturization and efficiency due to the diffraction limit and intrinsic material limitations. Here, we demonstrate a room-temperature plasmonic nanolaser based on a single InGaN/GaN nanopillar. Guided by finite-element simulations, the optimized metal-insulator-semiconductor cavity enhances light-matter interaction while minimizing optical loss. The device achieves yellow lasing at 571 nm with a low threshold of 0.6 kW/cm² at 300 K, benefiting from alleviated quantum-confined Stark effect and strong Purcell effect. This work enables highly efficient long-wavelength nanolasers for on-chip nanophotonic applications.