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All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

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Quantum tunneling high-speed nano-excitonic modulator.

Hyeongwoo Lee¹, Sujeong Kim¹, Seonhye Eom²

¹Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, Republic of Korea.

Nature Communications

|October 8, 2024

Summary

High-speed electrical modulation of nanoscale exciton behaviors in Molybdenum disulfide (MoS₂) monolayers was achieved using a quantum tunneling nanoplasmonic cavity. This breakthrough enables dynamic switching between exciton and trion states for advanced nano-optoelectronic devices.

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Area of Science:

Materials Science
Condensed Matter Physics
Nanotechnology

Background:

High-speed electrical control of nano-optoelectronic properties in 2D semiconductors is crucial for integrating nano-electronics and nano-photonics.
Excitonic devices rely on manipulating quasiparticles like excitons and trions for advanced functionalities.

Purpose of the Study:

To demonstrate high-speed electrical modulation of nanoscale exciton behaviors in a Molybdenum disulfide (MoS₂) monolayer at room temperature.
To investigate the dynamic switching between neutral exciton- and trion-dominant states using electrical control.
To provide a versatile platform for manipulating nano-optoelectronic properties.

Main Methods:

Utilizing a quantum tunneling nanoplasmonic cavity for electrical modulation.
Employing tip-induced spectroscopic analysis to characterize recombination dynamics.
Measuring time-resolved second-order correlation functions to determine modulation frequency.

Main Results:

Achieved high-speed electrical modulation of nanoscale exciton behaviors in MoS₂ monolayer.
Demonstrated dynamic switching between exciton and trion states via electrical control of tunneling electrons.
Observed significant changes in photoluminescence quantum yield due to modified recombination dynamics.
Attained a modulation frequency of up to 8 MHz for electrically-driven exciton-trion interconversion.

Conclusions:

The developed approach enables high-speed electrical control over nano-optoelectronic properties in 2D semiconductors.
This method facilitates the dynamic manipulation of transformable excitonic quasiparticles, including valley polarization, recombination, and transport dynamics.
The study presents a versatile platform for the development of next-generation excitonic devices.