Structural Modifications due to Bi-Doping in MAPbBr₃ Single Crystals and Their Impact on Electronic Transport and...

Area of Science:

• Materials Science
• Solid-State Physics
• Optoelectronics

Background:

• Doping is crucial for tuning lead halide perovskite properties for advanced applications.
• Understanding dopant effects on material characteristics and stability is vital for perovskite development.

Purpose of the Study:

• Investigate bismuth (Bi) doping mechanisms in methylammonium lead bromide (MAPbBr3) single crystals.
• Determine the optimal Bi doping concentration for enhanced optoelectrical properties and thermal stability.
• Provide insights into the structure-property relationships influenced by Bi doping in MAPbBr3.

Main Methods:

• Single crystals of MAPbBr3 were grown using inverse temperature crystallization.
• Various concentrations of bismuth (Bi) were introduced as dopants.
• Structural, optical, electrical, and chemical properties, along with thermal stability, were analyzed.

Main Results:

• Bismuth doping significantly influences the structural, optical, electrical, and chemical properties of MAPbBr3.
• A saturation point for Bi doping was observed beyond 0.063% concentration.
• The highest thermal stability was achieved at the optimal doping concentration of 0.063% Bi.

Conclusions:

• Bismuth doping offers a viable strategy to enhance the performance and stability of MAPbBr3 perovskites.
• The identified optimal doping concentration provides a benchmark for future perovskite material engineering.
• This research contributes to a deeper understanding of doping effects in methylammonium-based perovskites, crucial for device applications.