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Development of a Topological-Insulator-Based Quantum Resistance Standard
Ngoc Thanh Mai Tran1,2, Linsey K Rodenbach3, Jason M Underwood1
1National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, USA.
IEEE Transactions on Instrumentation and Measurement
|October 9, 2024
Summary
This study characterizes the quantum anomalous Hall effect resistor using chromium-doped bismuth antimony telluride. Precision measurements were achieved by coupling the resistor to a programmable Josephson voltage standard without a magnetic field.
Area of Science:
- Condensed Matter Physics
- Quantum Metrology
Background:
- The quantum anomalous Hall (QAH) effect offers dissipationless conduction, a key property for quantum standards.
- Integrating quantum electrical standards requires robust characterization and inter-device coupling.
Purpose of the Study:
- To characterize a QAH effect resistor based on Cr-doped BiSbTe.
- To demonstrate direct coupling of the QAH resistor to a programmable Josephson voltage standard (PJVS).
- To perform precision measurements of QAH resistance at zero magnetic field.
Main Methods:
- Fabrication and characterization of Cr-doped BiSbTe thin films exhibiting the QAH effect.
- Experimental setup for direct coupling between the QAH resistor and a PJVS.
- Precision resistance measurements under microwave biasing of the PJVS.
Main Results:
- Successful characterization of the QAH effect in the Cr-doped BiSbTe material.
- Demonstration of the QAH resistor's integration with a PJVS at zero magnetic field.
- Precise measurement of QAH resistance influenced by microwave signals.
Conclusions:
- The QAH effect resistor shows promise for quantum electrical metrology.
- Direct coupling to PJVS enables advanced precision measurements.
- This work contributes to the development of integrated quantum electrical standard systems.
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