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Engineering Boron Vacancy Defects in Boron Nitride Nanotubes.

Madeline Hennessey^1,2, Benjamin Whitefield^1,2, Priya Singh³

¹School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia.

ACS Applied Materials & Interfaces

|October 11, 2024

Summary

Researchers engineered negatively charged boron vacancy (V-) spin defects in boron nitride nanotubes (BNNTs). These BNNT-based spins show directional magnetic field responses, enabling advanced quantum sensing.

Keywords:

Boron Nitride Nanotube Boron vacancy Magnetic field sensing ODMR Spin defects

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Area of Science:

Quantum sensing and materials science.
Exploration of spin defects in low-dimensional nanomaterials.

Background:

Spin defects in hexagonal boron nitride (hBN) are promising for quantum sensing.
Negatively charged boron vacancy (V-) centers have been studied in bulk and few-layer hBN.

Purpose of the Study:

To engineer and investigate V- spin defects within boron nitride nanotubes (BNNTs).
To explore the unique properties and potential applications of V- spin defects in BNNTs.

Main Methods:

Engineering of V- spin defects in BNNTs.
Characterization of spin defect distribution and properties.
Analysis of spin response to external magnetic fields.

Main Results:

Successfully engineered V- spin defects distributed along and around BNNTs.
Observed a directional magnetic field response in BNNT-based spins, unlike in hBN flakes.
Demonstrated that the tubular geometry of BNNTs facilitates controlled placement of spin defects.

Conclusions:

BNNTs offer a unique platform for engineering spin defects with directional magnetic sensitivity.
The controlled placement of spins in BNNTs opens avenues for high-resolution quantum sensing.
This work supports future optomechanical studies of spin defects in hBN nanomaterials.