Bending-induced enhanced spatial separation of dopants and long-lived conventional nanoribbon p-n junctions

The spatial separation of dopants is crucial in extending the lifetime of nanoribbon p-n junctions, which is traditionally realized via van der Waals heterostructures at a high cost. In this study, we employ atomistic quantum mechanical simulations to demonstrate that a simple in-plane bending deformation can lead to an enhanced doping preference in conventional nanoribbons. Dopants with larger atomic sizes than those of host atoms tend to reside on the tensile side close to the outermost edge of the bent nanoribbons, while dopants with smaller atomic sizes than those of host atoms tend to reside on the compressive side close to the innermost edge of the bent nanoribbons. We also show that this doping preference induces an enhanced spatial separation of n-type and p-type dopants with different atomic sizes. As conventional nanoribbons are easier to synthesize and cost-effective, our results provide a pathway for modulating dopant distribution and designing long-lived nanoribbon p-n junctions via inhomogeneous strain engineering.