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Ultrafast Laser-Induced Demagnetization and Valley Polarization in a Room-Temperature Altermagnetic Cr2MoS4 Monolayer
Zhen Gao1, Fengxian Ma1, Tingli He2
1College of Physics, Hebei Key Laboratory of Photophysics Research and Application, Hebei Normal University, 050024 Shijiazhuang, China.
Abstract:
Achieving ultrafast room-temperature magnetism control in two-dimensional (2D) altermagnetic (AM) materials is a major challenge in spintronics. In this study, we identify Cr2MoS4 as a promising material to overcome these limitations, combining exceptional stability, robust altermagnetism, and laser-tunable electronic and magnetic properties. Cr2MoS4 features an in-plane magnetic easy axis with a magnetic anisotropy energy of 0.24 meV/Cr and a high critical temperature of 400 K, well-above room temperature. Upon laser pulse irradiation, Cr2MoS4 undergoes rapid electron and phonon temperature rises, resulting in ultrafast demagnetization within ∼200 fs─comparable to antiferromagnetic Dirac semimetals. Transient thermal effects further induce structural distortions, breaking mirror symmetry and generating valley polarization in Cr2MoS4. Beyond single-pulse excitation, we apply a double-pulse with adjustable time delays (200-1000 fs), enabling precise modulation of spin dynamics. Tuning the delay allows for control over demagnetization times, amplification of demagnetization effects, and even the reversal of the recovery process into repeated demagnetization. These findings establish Cr2MoS4 as an excellent platform for spintronic applications and offer new insights into ultrafast optical control of AM spin dynamics.
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