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Optimizing Magnetic Force Microscopy Resolution and Sensitivity to Visualize Nanoscale Magnetic Domains
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Effects of Magnetostatic Interactions in FeNi-Based Multilayered Magnetoimpedance Elements.
Grigory Yu Melnikov1, Sergey V Komogortsev2,3, Andrey V Svalov1
1Institute of Natural Sciences and Mathematics, Ural Federal University, 620002 Ekaterinburg, Russia.
Sensors (Basel, Switzerland)
|October 16, 2024
Summary
Researchers developed multilayer magnetoimpedance (MI) elements with high sensitivity. Optimized element design and magnetostatic interactions in [Cu/FeNi] multilayers are key for sensitive magnetic field detection.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Magnetoimpedance (MI) sensors are crucial for magnetic field detection.
- Optimizing multilayer structures is essential for enhancing MI sensor performance.
Purpose of the Study:
- To fabricate and characterize multilayer magnetoimpedance elements with enhanced sensitivity.
- To investigate the influence of multilayer design and magnetostatic interactions on MI properties.
Main Methods:
- Magnetron sputtering for multilayer deposition.
- Lift-off lithography for element fabrication.
- Analysis of magnetic domain structure and ferromagnetic resonance.
- Dynamic methods for frequency-dependent investigation.
Main Results:
- Achieved maximum MI sensitivity of 40%/Oe in a low magnetic field range (3-5 Oe).
- Demonstrated the critical role of magnetostatic interactions between FeNi layers.
- Element design, including stripe shape and multilayer stacking, significantly impacts magnetic properties.
Conclusions:
- The developed [Cu/FeNi] multilayer structures exhibit promising high sensitivity for magnetic field sensing applications.
- Careful control over magnetostatic interactions and element geometry is vital for optimizing MI sensor performance.
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