Gated spin manipulation in a bipolar Rashba semiconductor: a Janus TeSSe monolayer

Area of Science:

• Condensed Matter Physics
• Materials Science
• Spintronics

Background:

• Electronically controlled spin direction is crucial for spintronic devices.
• The bipolar Rashba semiconductor (BRS) concept offers a novel approach to spin precession manipulation.

Purpose of the Study:

• To confirm Janus TeSSe as a BRS material.
• To investigate the electronic control of spin texture direction in Janus TeSSe.
• To explore methods for regulating the material's properties.

Main Methods:

• First-principles calculations were employed to study the electronic and spin properties of Janus TeSSe.
• The study analyzed the effect of gate voltage on spin texture.
• Investigated the influence of charge doping, external electric fields, and strain engineering on the energy band and Rashba coefficient.

Main Results:

• Janus TeSSe was confirmed to be a bipolar Rashba semiconductor.
• The spin texture direction in a Janus TeSSe-based spin field-effect transistor can be electronically controlled via gate voltage.
• Detailed mechanisms of gate voltage regulation on spin direction and modulation of band structure and Rashba coefficient were elucidated.

Conclusions:

• A new Janus BRS TeSSe monolayer material capable of electrical control of spin rotation through electrical gating is proposed.
• This discovery enriches the family of two-dimensional BRS materials.
• The findings inspire further experimental research in spin manipulation.