Related Experiment Video
Updated: Jan 8, 2026

Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations
Published on: October 12, 2019
Interface-Dipole-Driven Type-II Band Offset Engineering in Perovskite Heterostructures
Lili Xu1, Shengli Zhang2, Yee Sin Ang1
1Science, Mathematics and Technology (SMT) Cluster, Singapore University of Technology and Design, Singapore 487372, Singapore.
Abstract:
Even though perovskite solar cells achieve high efficiency, interfacial energy mismatches with transport layers induce nonradiative recombination and limit performance. Here, we propose interface-dipole-driven band alignment engineering as a strategy to guarantee Type-II band alignment by integrating a Janus monolayer into a perovskite/Janus monolayer/perovskite heterostructure. The intrinsic out-of-plane dipole shifts the band edges of adjacent perovskite layers, thus enabling one layer to act as a light absorber and the other as a charge transport layer. Using CsPbBr3/MSSe/CsPbBr3 (M = Mo, W) as model systems, first-principles calculations confirm the formation of dipole-driven Type-II band alignment, while nonadiabatic molecular dynamics predict extended carrier lifetimes in CsPbBr3/WSSe/CsPbBr3, which can be attributed to its stronger dipole moment of monolayer WSSe and weaker nonadiabatic coupling. These results establish Janus monolayers as a versatile interfacial design platform to enhance carrier separation and suppress recombination, thus paving a way toward simplified, transport-layer-free, high-efficiency perovskite optoelectronics.
More Related Videos
11:38Influence of Hybrid Perovskite Fabrication Methods on Film Formation, Electronic Structure, and Solar Cell Performance
Published on: February 27, 2017
08:12Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films
Published on: September 8, 2017
Related Concept Videos
Energy Bands in Solids
Band Formation:
When atoms are brought close together, as in a solid, these discrete energy levels begin to split due to the overlap of electron orbitals from adjacent atoms. This split occurs because of the Pauli exclusion principle, which states...
Semiconductors
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Band Theory
The energy difference between these bands is known as the band gap.
Conductor, Semiconductor,...
Molecular Orbital Theory II