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Electrical Doping in Sc-III-Nitrides: Toward Multifunctional Devices at the Single Device Level.
Milad Fathabadi1, Mohammad Fazel Vafadar1, Jean-Christophe Lamanque1
1Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec, H3A 0E9, Canada.
Small (Weinheim an Der Bergstrasse, Germany)
|October 25, 2024
Summary
Scandium-containing III-nitrides (Sc-III-nitrides) show tunable electrical doping from n-type to p-type by adjusting magnesium concentrations. This breakthrough enables multifunctional devices on a single material platform for advanced electronics.
Area of Science:
- Semiconductor Physics
- Materials Science
- Nanotechnology
Background:
- Achieving multifunctional devices requires integrating diverse components onto a single material platform.
- Scandium-containing III-nitrides (Sc-III-nitrides) are promising for this but lack established electrical doping characteristics.
Purpose of the Study:
- To investigate the electrical doping properties of Sc-III-nitrides.
- To demonstrate optoelectronic devices utilizing Sc-III-nitrides on silicon (Si).
Main Methods:
- Utilized nanowire format for Sc-III-nitride material.
- Employed magnesium (Mg) as an impurity dopant to control electrical properties.
- Fabricated and tested optoelectronic devices, including light-emitting applications.
Main Results:
- Demonstrated that Sc-III-nitrides can be tuned from n-type to p-type conductivity by controlling Mg doping levels.
- Successfully used p-type Sc-III-nitrides as a hole injection layer in a light-emitting device.
- Showcased improved regrown p-type layer quality with Sc incorporation in device structures.
Conclusions:
- Electrical doping in Sc-III-nitrides is achievable and controllable.
- This work is a significant advancement towards a single-platform, multifunctional device integration.
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