Site-Selective Nanowire Synthesis and Fabrication of Printed Memristor Arrays with Ultralow Switching Voltages on...

Large area electronics (LAE) with the capability to sense and retain information are crucial for advances in applications such as wearables, digital healthcare, and robotics. The big data generated by these sensor-laden systems need to be scaled down or processed locally. In this regard, brain-inspired computing and in-memory computing have attracted considerable interest. However, suitable architectures have mainly been developed using costly and resource-intensive conventional lithography-based methods. There is a need for the development of innovative, resource-efficient fabrication routes that enable such devices and concepts. Herein, we present ZnO nanowire (NW)-based memristors on a polyimide substrate fabricated by a LAE-compatible and resource-efficient route comprising solution processing and printing technologies. High-resolution "drop-on-demand" and "direct ink write" printers are employed to deposit metallic layers (silver and gold) and a ZnO seed layer, needed for the site-selective growth of ZnO NWs via a low-cost hydrothermal method. The printed memristors show high bipolar resistance switching (ON/OFF ratio >10³) between two nonvolatile states and consistent switching at ultralow voltages (all devices showed switching at amplitudes <200 mV), with the best performing device showing consistent cycled resistance switching over 4 orders of magnitude with SET and RESET voltages of about 71 and -57 mV, respectively. Thus, the presented devices offer reliable high resistance switching at the lowest reported voltage for printed memristors and prove to be competitive with many conventional nanofabrication-based devices. The presented results show the potential printed memristors technology holds for large-area, low-voltage sensing applications such as electronic skin.