Numerical Modeling of Vortex-Based Superconducting Memory Cells: Dynamics and Geometrical Optimization

The lack of dense random-access memory is one of the main obstacles to the development of digital superconducting computers. It has been suggested that AVRAM cells, based on the storage of a single Abrikosov vortex-the smallest quantized object in superconductors-can enable drastic miniaturization to the nanometer scale. In this work, we present the numerical modeling of such cells using time-dependent Ginzburg-Landau equations. The cell represents a fluxonic quantum dot containing a small superconducting island, an asymmetric notch for the vortex entrance, a guiding track, and a vortex trap. We determine the optimal geometrical parameters for operation at zero magnetic field and the conditions for controllable vortex manipulation by short current pulses. We report ultrafast vortex motion with velocities more than an order of magnitude faster than those expected for macroscopic superconductors. This phenomenon is attributed to strong interactions with the edges of a mesoscopic island, combined with the nonlinear reduction of flux-flow viscosity due to the nonequilibrium effects in the track. Our results show that such cells can be scaled down to sizes comparable to the London penetration depth, ∼100 nm, and can enable ultrafast switching on the picosecond scale with ultralow energy per operation, ∼10-19 J.