Related Experiment Video
Updated: Jun 9, 2025

Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing
Published on: June 9, 2023
Modulation of Phase-Locking Characteristics of NbOx Memristor by Ag Doping
1Key Laboratory of Advanced Materials, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.
Abstract:
Memristors based on niobium oxide have attracted wide interest due to their applications in artificial neural network. Phase-locking (PL) characteristics of NbOx newly explored roots in complex nonlinear dynamics and exhibits great potential in periodical signal handling because of its bioinspired nature. In this study, we fabricate a Pd/Nb/Ag-NbOx/Nb/Pd memristive structure and study the effects of Ag doping on the PL characteristics. We clearly see that the NbOx memristor responds to signal in three distinct patterns. For the low-frequency input, the memristor fires spike series and locks the phase near during the positive period of sinusoidal input, and it encodes the input features by the spike number per period. For the middle-frequency input, the memristor fires one spike per period at a definite phase. The output has the same frequency as the input. The locked phase is proportional to the input frequency. For the high-frequency input, the memristor transforms high frequency to low frequency signal and locks at a definite phase higher than 2π. We combined the microstructural analysis and chaos dynamics to know that Ag doping will lower the activation energy, enhance the responding rate, and enhance thermal conductivity, which extends the locked frequency to 1.7 times the value of the undoped NbOx memristor. We also obtained the locked frequency of even 40 MHz after modulating the elementary circuit configuration according to the material modification and chaos model. Our study proposes to handle a signal with high efficiency resembling auditory sense and inspires a novel artificial intelligent computation prototype.
Related Concept Videos
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
Characteristics of MOSFET
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

