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Updated: Jun 9, 2025

Simulation, Fabrication and Characterization of THz Metamaterial Absorbers
Published on: December 27, 2012
Theoretical research on a broadband terahertz absorber for thermally controlled radiation emission based on the
Fei Liu1, Haochong Xu1, Honggang Pan1
1Engineering Research Center of Communication Devices and Technology, Ministry of Education, Tianjin Key Laboratory of Film Electronic and Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China. phg022@email.tjut.edu.cn.
Abstract:
In this paper, a tunable and ultra-broadband terahertz (THz) absorber is proposed. The absorber, which is built upon the conventional metal-dielectric-metal tri-layer configuration, incorporates a KCl thin film within the dielectric gap situated between the top resonator and the middle dielectric layer. The simulation indicates that the absorber effectively captures more than 90% of terahertz waves between 3.6 and 7.3 THz, achieving absorption of over 99% within the 5.8-6.9 THz range. This unique broadband absorber is enabled by the interaction of plasmon and epsilon-near-zero (ENZ) modes. Additionally, due to the utilization of VO2 in the top resonator, the designed absorber holds potential to function as a thermally controlled radiation emitter, exhibiting a high emissivity of 90.5% at high temperatures while maintaining a low emissivity of 8.2% at low temperatures. The absorber is uncomplicated and adjustable, offering great potential for use in thermal management, terahertz camouflage, and engineering insulation.
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