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Reset-Voltage Controlled Resistance-State and Applications of Forming-Free Fe-Doped SrTiO3 Thin-Film Memristor
Ke-Jing Lee1, Cheng-Hua Wu2, Cheng-Jung Lee2
1Center for Environmental Toxin and Emerging-Contaminant Research & Technology Center, Department of Electronic Engineering, Cheng Shiu University, Kaohsiung City 83347, Taiwan.
Abstract:
In this study, we prepared a strontium ferrite titanate (STF) thin film using a sol-gel process to insulate resistive random-access memory (RRAM) applications. Compared to the typical strontium titanate (STO) RRAM, the improvement in the resistive switching characteristics in STF RRAM is obvious. The Al/STO/ITO/Glass RRAM set/reset voltages of -1.4 V/+3.3 V and the Al/STF/ITO/Glass RRAM set/reset voltages of -0.45 V/+1.55 V presented a memory window larger than 103, a low operating voltage and device stability of more than 104 s. In this study, the influence of Fe on the conducting paths and the bipolar resistive switching properties of Al/STF/ITO/Glass RRAM devices is investigated.
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