Multiscale Models of CVD Process: Review and Prospective.

Area of Science:

• Materials Science
• Chemical Engineering
• Computational Modeling

Background:

• Chemical Vapor Deposition (CVD) is vital for high-quality thin films in semiconductors and optics.
• CVD process optimization is complex due to numerous multiscale parameters (chemistry, temperature, pressure, flow, substrate).
• Existing numerical simulations (nanoscale, mesoscale, macroscale) face challenges in inter-scale parameter extraction.

Purpose of the Study:

• To provide a comprehensive overview of CVD models across different scales.
• To analyze multiscale coupling models for integrating phenomena at various levels.
• To bridge the gap between CVD modeling theory and practical applications.

Main Methods:

• Review of CVD processes and critical parameters.
• In-depth analysis of nanoscale, mesoscale, and macroscale CVD models.
• Discussion of multiscale coupling frameworks and practical applications.
• Identification of inter-scale parameter transfer mechanisms.

Main Results:

• Multiscale coupling modeling offers a powerful framework for complex CVD systems.
• Various multiscale CVD models and their practical applications are discussed.
• Key parameters enabling information transfer between scales are summarized.
• Schemes for multiscale coupling are presented for future research.

Conclusions:

• Multiscale modeling is essential for efficient and precise control of the CVD process.
• Integrating different scales provides a holistic approach to optimizing CVD.
• This review offers insights for advancing CVD process engineering through advanced modeling.