Mott resistive switching initiated by topological defects

Area of Science:

• Condensed Matter Physics
• Materials Science
• Quantum Materials

Background:

• Avalanche resistive switching is crucial for advanced electronics like neuromorphic devices and resistive memories.
• The underlying stochastic fluctuations driving this switching in solid-state devices remain poorly understood.
• Vanadium sesquioxide (V2O3) is a Mott material exhibiting a metal-to-insulator transition linked to lattice changes.

Purpose of the Study:

• To elucidate the origin of resistive switching in V2O3 devices under operating conditions.
• To investigate the role of local fluctuations and phase transitions in electronic property changes.
• To explore potential mechanisms for controlling resistive switching via material properties.

Main Methods:

• Operando X-ray nano-imaging was employed to observe the switching process in situ.
• The study focused on V2O3, a material known for its Mott insulating properties and phase transitions.
• Analysis involved characterizing the interplay between electronic states and lattice transformations.

Main Results:

• The study captured the origin of resistive switching in a V2O3 device during operation.
• A novel class of volatile electronic switching, triggered by nanoscale topological defects, was identified.
• These defects arise within the shear-strain order parameter of the insulating phase.

Conclusions:

• Topological defects in the strain order parameter are the key drivers of resistive switching in V2O3.
• Strain engineering offers a pathway to manipulate these defects for dynamic control of Mott switching.
• Topology-driven electronic transitions are a significant phenomenon in various quantum materials.