Related Experiment Video
Updated: Jun 8, 2025
11:38
Influence of Hybrid Perovskite Fabrication Methods on Film Formation, Electronic Structure, and Solar Cell Performance
Published on: February 27, 2017
18.4K
Vertical Compositional Heterogeneity Induces Instability in All-Inorganic CsPbIBr2 Perovskites
Paheli Ghosh1, Ben F Spencer2, Lethy Krishnan Jagadamma1
1Energy Harvesting Research Group, School of Physics & Astronomy, SUPA, University of St Andrews, St Andrews KY16 9SS United Kingdom.
ACS Applied Energy Materials
|November 1, 2024
Summary
Investigating defects in cesium lead iodide bromide (CsPbIBr2) perovskite films using X-ray photoelectron spectroscopy revealed metallic lead (Pb0) presence. Antisolvent treatment reduced these defects, enhancing CsPbIBr2 solar cell performance and stability.
Area of Science:
- Materials Science
- Solid-State Chemistry
- Optoelectronics
Background:
- Vertical compositional homogeneity and defect distribution are critical for halide-perovskite optoelectronic device performance.
- Metallic lead (Pb0) is identified as a key indicator of defect and recombination centers in perovskite films.
Purpose of the Study:
- To conduct a depth-dependent study of chemical composition and metallic Pb0 content in CsPbIBr2 perovskite films.
- To investigate the impact of antisolvent engineering on defect reduction and film properties.
Main Methods:
- Utilized lab-based hard X-ray photoelectron spectroscopy (HAXPES) and soft X-ray photoelectron spectroscopy (SPES).
- Analyzed the depth-dependent distribution of metallic Pb0 in CsPbIBr2 films.
Main Results:
- Metallic Pb0 was detected in both the bulk and surface of CsPbIBr2 films, indicating defect formation.
- Pb0 concentration was higher in the bulk compared to the surface.
- Antisolvent treatment significantly reduced Pb0, particularly in the bulk, leading to improved phase stability and solar cell performance.
Conclusions:
- Antisolvent engineering is an effective strategy for minimizing Pb0 defects in CsPbIBr2 perovskite films.
- Reduced defect density correlates with enhanced phase stability and improved optoelectronic device performance.
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