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We developed an analytical model for correlated electrons that explains Fermi arc and pseudogap formation in cuprates. This model simplifies complex calculations, offering insights into electronic state modifications with doping.

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Area of Science:

  • Condensed Matter Physics
  • Quantum Materials
  • Electronic Structure Theory

Background:

  • Cuprates exhibit complex electronic behaviors, including Fermi surface modifications like Fermi arcs and pseudogaps.
  • Understanding these phenomena is crucial for developing advanced electronic materials.

Purpose of the Study:

  • To present an analytically solvable model for correlated electrons.
  • To capture key Fermi surface modifications in doped cuprates.
  • To elucidate the mechanism behind Fermi arc and pseudogap formation.

Main Methods:

  • Development of an analytical model and Hamiltonian.
  • Qualitative reproduction of results from dynamical vertex approximation (DVA) many-body calculations.
  • Analysis of electronic state transformations.

Main Results:

  • The model successfully captures Fermi surface modifications in both hole- and electron-doped cuprates.
  • It provides a transparent mechanism for the formation of disconnected Fermi arcs.
  • The model explains the opening of a pseudogap through the transformation of Fermi surface segments into Luttinger arcs.

Conclusions:

  • The analytical model offers a simplified yet accurate description of complex electronic phenomena in cuprates.
  • It clarifies the distinct roles of electronic states on Fermi arcs and Luttinger arcs.
  • This work provides a foundational understanding for further research into correlated electron systems.