Room-temperature ferromagnetic MnGa nanoparticles in dilute magnetic semiconductor (Ga, Mn)As thin film: preparation...

The GaAs based diluted magnetic semiconductor, (Ga, Mn)As, with the unique advantage of manipulating the spin and charge was widely investigated in the scientific community and considered as a potential material for the spintronic devices. However, its Curie temperature (T_c), which is limited to around 200 K, hinders the research progress of diluted magnetic semiconductors for potential device applications. Herein, we propose an approach to prepare the MnGa nanoparticles embedded in (Ga, Mn)As matrix using the magnetron sputtering deposition of Mn on GaAs surface, followed by the nano-second pulsed laser annealing (PLA), which gives aT_cabove 400 K. We demonstrate that the MnGa nanoparticles are only formed in (Ga, Mn) As thin film during the nano-second PLA under a critical range of energy density (0.4-0.5 J cm^-2). The highest achieved coercivity, saturation magnetization and remanent magnetization are 760 Oe, 11.3 emu cm^-3and 9.6 emu cm^-3, respectively. This method for preparing the hybrid system of ferromagnetic metal/dilute magnetic semiconductor builds a platform for exploring the interesting spin transport phenomenon and is promising for the application of spintronic devices.