Precise p-type and n-type doping of two-dimensional semiconductors for monolithic integrated circuits

Area of Science:

• Materials Science
• Condensed Matter Physics
• Nanotechnology

Background:

• Controllable fabrication of patterned p-type and n-type channels in 2D semiconductors is crucial for complementary metal-oxide-semiconductor (CMOS) logic.
• Current methods face challenges in precise doping control, hindering the integration of single van der Waals materials for advanced transistor scaling.

Purpose of the Study:

• To devise a precise substitutional doping method for 2D semiconductors.
• To enable the wafer-scale production of 2H-MoTe2 thin films with specific p-type or n-type doping.
• To facilitate the monolithic integration of p-type and n-type semiconductor channels for 2D CMOS circuits.

Main Methods:

• Developed a precise substitutional doping technique for 2D semiconductors.
• Synthesized wafer-scale 2H-MoTe2 thin films with controllable p-type and n-type doping.
• Utilized a one-step growth method for spatially selective doping, enabling monolithic integration.

Main Results:

• Achieved wafer-scale 2H-MoTe2 thin films with precise p-type or n-type doping control.
• Demonstrated a one-step growth method for spatially selective doping of 2H-MoTe2.
• Successfully fabricated a chip-sized 2D CMOS inverter array with excellent device performance and yield.

Conclusions:

• The developed substitutional doping method is a significant advancement for 2D semiconductor technology.
• This approach facilitates the monolithic integration of p-type and n-type channels, paving the way for 2D CMOS circuits.
• The findings represent a major step towards the practical application of 2D semiconductors in very large-scale integration (VLSI) technology.