High-Performance Field-Effect Sensing of Ammonia Based on High-Density and Ultrathin Silicon Nanowire Channels

Ultrathin silicon nanowires (SiNWs), grown via a high-yield and low-cost catalytic approach, are ideal building blocks for the construction of highly sensitive field-effect transistor (FET) sensors. In this work, we demonstrate a high-density growth integration of an ultrathin SiNW array, with diameter down to D_NW = 24 ± 3 nm and narrow NW-to-NW spacing of only 120 nm, fabricated via an in-plane solid-liquid-solid (IPSLS) approach. Junctionless bottom-gated SiNW FETs are successfully constructed, exhibiting a high on/off current ratio of >10⁷ and a sharp subthreshold swing of 156 mV/dec These provide an excellent platform for realizing high-performance NH₃ sensing at room temperature, with a high response of 96.9% at 25 ppm and 38.6% at 2.5 ppm, rapid response time of 7.9 s for 5% response (or 85.8 s for 50% response), and superior selectivity against common volatile organic compound gases in ambient environments. Finally, the field-effect sensing mechanism is attributed to the Schottky barrier modulation by the adsorbed NH₃ molecules at the metal/SiNW interface, as confirmed through an epoxy-masked selective region comparative analysis. These results provide a solid basis for the ultrathin catalytic IPSLS-SiNWs to serve as advantageous one-dimensional (1D) channels for the scalable integration of various high-performance and flexible gas sensing applications.