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Updated: Apr 12, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Qing Cao1, Jiajun Dai2, Zhuting Hao1
1Institute of Chemistry and Biochemistry, Freie Universität Berlin, Altensteinstraße 23a, 14195, Berlin, Germany.
We engineered graphene/molybdenum disulfide (G/MoS2) heterostructures by modifying graphene functional groups. This approach precisely controls interlayer spacing and charge transport, optimizing van der Waals heterostructure properties.
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