Related Experiment Video

Updated: Jun 7, 2025

Design and Characterization Methodology for Efficient Wide Range Tunable MEMS Filters
15:25

Design and Characterization Methodology for Efficient Wide Range Tunable MEMS Filters

Published on: February 4, 2018

6.1K

Design of a Novel SiP Integrated RF Front-End Module Based on SOI Switch and SAW Filter

Xuanhe Wei1, Youming Miao1, Xiao Jin1

  • 1College of Electrical and Electronic Engineering, Wenzhou University, Wenzhou 325035, China.

Sensors (Basel, Switzerland)
|November 9, 2024
PubMed

Keywords:
CARF front-end moduleSiP integrationdiversity acceptance

More Related Videos

Fabrication and Characterization of Superconducting Resonators10:26

Fabrication and Characterization of Superconducting Resonators

Published on: May 21, 2016

11.3K
Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station05:57

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

Published on: April 1, 2020

8.0K

Related Concept Videos

Design Example01:23

Design Example

The innovation of touch-tone telephony revolutionized the telecommunications industry by replacing the traditional rotary dial with a dual-tone multi-frequency (DTMF) signaling system. This system uses a matrix-style keypad with buttons arranged in four rows and three columns, creating 12 distinct signals each assigned to a pair of frequencies. Each button press results in a simultaneous generation of two sinusoidal tones – one from a low-frequency group (697 to 941 Hz) and one from a...
316
MOSFET Amplifiers01:17

MOSFET Amplifiers

The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
147
Small-Signal Analysis of MOSFET Amplifiers01:23

Small-Signal Analysis of MOSFET Amplifiers

In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...
510
Design Example: Capacitance Multiplier Circuit01:20

Design Example: Capacitance Multiplier Circuit

In integrated circuit technology, a capacitance multiplier is often utilized to produce a larger capacitance value when a small physical capacitance falls short. This is achieved by a circuit that multiplies capacitance values by a factor of up to 1000, such that a 10-pF capacitor can replicate the performance of a 100-nF capacitor.
The circuit illustrated in Figure 1 below incorporates two op-amps, with the first operating as a voltage follower and the second acting as an inverting amplifier.
711
Active Filters01:25

Active Filters

Active filters are electronic circuits that use operational amplifiers (op-amps), resistors, and capacitors to filter out unwanted frequency components from a signal. A first-order low-pass active filter is designed to pass signals with a frequency lower than a certain cutoff frequency and attenuate frequencies higher than that cutoff frequency. The transfer function for a first-order low-pass active filter is:
786
Biasing of FET01:22

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
218