GeSe-embedded metal-oxide double heterojunctions for facilitating self-biased and efficient NIR photodetection

Infrared radiation detection is significantly important in communication, imaging, and sensing fields. Here, we present the integration of germanium selenide (GeSe) with a metal-oxide heterojunction to achieve efficient near-infrared (850 nm) photodetection under zero bias conditions. Nickel oxide (NiO) and silicon (Si) formed a favorable energy band alignment for the efficient separation of photogenerated charge carriers, resulting in a high figure of merits. The additional incorporation of a germanium selenide (GeSe) interlayer between the nickel oxide (NiO) and silicon (Si) heterojunction improved the external responsivity (from 0.22 to 3300 mA W^-1), detectivity (from 1.24 × 10⁷ to 20 × 10⁹ Jones), normalized photocurrent to dark current ratio (from 4 × 10³ to 3 × 10⁵ W^-1), noise equivalent power (from nW to pW), and rise/fall time (from 34/34.5 ms to 14/13 ms). The interlayer introduction of a semiconductor in various heterojunctions can facilitate self-biased and broadband photodetection for widely used optoelectronic applications.