Multi-band microbolometer in CMOS technology

Multi-spectral imaging enhances the information diversity of the object with complex, expensive, and low integrated components. Here, we demonstrated an antenna-coupled microbolometric detector in complementary metal-oxide-semiconductor (CMOS) technology, utilizing SiO2 absorption and L-shaped fractal antenna to achieve multi-band detection from infrared (IR) to terahertz (THz). Experimental results demonstrate that the detector can achieve high sensitivity detection in both THz and IR bands, with the maximum detectivity of 5 (10⁸ cm·Hz^1/2/W @305 GHz and 7 (10⁸ cm·Hz^1/2/W @8.55 µm, respectively. The presented multi-spectral detector is easily implementable in integrated circuit process, conducive to high-density, low-cost, and high-performance array imaging.