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    This study presents a novel multi-band detector using complementary metal-oxide-semiconductor (CMOS) technology for infrared (IR) and terahertz (THz) detection. The device offers high sensitivity and is suitable for cost-effective, high-density imaging arrays.

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    Area of Science:

    • Optoelectronics
    • Integrated Photonics
    • Sensor Technology

    Background:

    • Multi-spectral imaging provides rich information but often relies on complex, expensive, and poorly integrated components.
    • Existing detectors may lack sensitivity or broad spectral coverage for diverse applications.

    Purpose of the Study:

    • To demonstrate a novel antenna-coupled microbolometric detector capable of multi-band detection from infrared (IR) to terahertz (THz) spectra.
    • To leverage complementary metal-oxide-semiconductor (CMOS) technology for a low-cost, integrated solution.

    Main Methods:

    • Fabrication of a microbolometric detector using CMOS technology.
    • Integration of a SiO2 absorption layer and an L-shaped fractal antenna for multi-band spectral response.
    • Characterization of detector performance in both THz and IR bands.

    Main Results:

    • Achieved high sensitivity detection across both THz and IR bands.
    • Maximum detectivity of 5 x 10^8 cm·Hz^1/2/W at 305 GHz (THz band).
    • Maximum detectivity of 7 x 10^8 cm·Hz^1/2/W at 8.55 µm (IR band).

    Conclusions:

    • The developed detector enables high-sensitivity, multi-spectral detection from IR to THz.
    • The CMOS-compatible design facilitates easy integration for high-density, low-cost array imaging.
    • This technology holds promise for advanced imaging systems requiring broad spectral information.